IPD05N03LB G
MOSFET N-CH 30V 90A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD05N03LB-G is an N-Channel Power MOSFET in a PG-TO252-3-11 package, designed for high-efficiency power conversion applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 90A (Tc). The low on-resistance of 4.8mOhm @ 60A, 10V, coupled with a maximum Drain-Source On-State Resistance (Rds(on)) of 5.2mOhm @ 60A, 10V, ensures minimal conduction losses. With a maximum power dissipation of 94W (Tc) and an operating temperature range of -55°C to 175°C (TJ), it is suitable for demanding environments. Key electrical characteristics include a Gate Charge (Qg) of 25 nC @ 5V and input capacitance (Ciss) of 3200 pF @ 15V. This MOSFET is commonly utilized in industrial power supplies, automotive electronics, and power management systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 40µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3200 pF @ 15 V |
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