IPD053N08N3GBTMA1
MOSFET N-CH 80V 90A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD053N08N3GBTMA1 is an N-Channel Power MOSFET designed for high-performance applications. This device offers an 80 V drain-source voltage and can handle a continuous drain current of 90 A at 25°C, with a maximum power dissipation of 150 W (Tc). Featuring an extremely low on-resistance (Rds On) of 5.3 mOhm at 90 A and 10 V, it minimizes conduction losses. The MOSFET utilizes advanced trench technology for enhanced efficiency. Key parameters include a gate charge (Qg) of 69 nC at 10 V and input capacitance (Ciss) of 4750 pF at 40 V. The device is supplied in a PG-TO252-3 package, suitable for surface mounting, and operates across a wide temperature range of -55°C to 175°C (TJ). This component is commonly found in automotive, industrial, and power supply applications requiring robust power switching.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.3mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 90µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4750 pF @ 40 V |
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