IPD053N06N3GBTMA1
MOSFET N-CH 60V 90A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPD053N06N3GBTMA1, offers a 60V drain-source voltage and continuous drain current capability of 90A at 25°C (Tc). This surface mount device, packaged in a PG-TO252-3 (DPAK), features a low on-resistance of 5.3mOhm at 90A and 10V Vgs. The MOSFET exhibits a gate charge (Qg) of 82 nC maximum at 10V and input capacitance (Ciss) of 6600 pF maximum at 30V. With a maximum power dissipation of 115W (Tc) and an operating temperature range of -55°C to 175°C (TJ), this component is suitable for applications in automotive and industrial power management.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.3mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 58µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6600 pF @ 30 V |
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