IPD050N03LGATMA1
MOSFET N-CH 30V 50A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD050N03LGATMA1 is a 30V N-channel Power MOSFET in a TO-252-3 (DPAK) surface-mount package. This device offers a continuous drain current capability of 50A at 25°C (Tc) and a maximum power dissipation of 68W (Tc). Key performance parameters include a low Rds(on) of 5mOhm at 30A and 10V, and a gate charge (Qg) of 31 nC at 10V. Input capacitance (Ciss) is specified at 3200 pF (max) at 15V. The MOSFET operates across a temperature range of -55°C to 175°C (TJ) and is supplied in Tape & Reel packaging. This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3200 pF @ 15 V |
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