IPD04N03LB G
MOSFET N-CH 30V 50A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ series N-Channel Power MOSFET, part number IPD04N03LB-G. This surface mount device features a 30V drain-source breakdown voltage and is rated for a continuous drain current of 50A at 25°C with a maximum power dissipation of 115W (Tc). The low on-resistance is specified as 4.1mOhm at 50A and 10V gate-source voltage. Key parameters include a typical gate charge of 40 nC at 5V and input capacitance of 5200 pF at 15V. The component operates within a temperature range of -55°C to 175°C (TJ). Supplied in a TO-252-3, DPAK package, this MOSFET is suitable for applications in automotive, industrial power, and consumer electronics.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.1mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 70µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5200 pF @ 15 V |
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