IPD048N06L3GBTMA1
MOSFET N-CH 60V 90A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD048N06L3GBTMA1 is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) capability of 90A at 25°C (Tc). With a low on-resistance (Rds On) of 4.8mOhm at 90A and 10V Vgs, it ensures efficient power transfer. The MOSFET is packaged in a PG-TO252-3 (DPAK) surface mount configuration, suitable for automated assembly. Key parameters include a gate charge (Qg) of 50 nC at 4.5V Vgs and input capacitance (Ciss) of 8400 pF at 30V Vds. Operating across a temperature range of -55°C to 175°C (TJ), this component is prevalent in automotive, industrial power supply, and server applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 58µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8400 pF @ 30 V |