IPD042P03L3GBTMA1
MOSFET P-CH 30V 70A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ P-Channel MOSFET, part number IPD042P03L3GBTMA1, is a high-performance power semiconductor designed for demanding applications. This device features a 30 V drain-source voltage rating and a continuous drain current capability of 70 A (Tc) at 25°C, with a maximum power dissipation of 150 W (Tc). The low on-resistance of 4.2 mOhm is achieved at 70 A and 10 V gate-source voltage.
Optimized for surface mounting, the IPD042P03L3GBTMA1 is housed in a TO-252-3, DPAK package. Key electrical parameters include a gate charge (Qg) of 175 nC at 10 V and an input capacitance (Ciss) up to 12400 pF at 15 V. The threshold voltage (Vgs(th)) is rated at 2 V, with a maximum gate-source voltage of ±20 V. This MOSFET is suitable for a wide operating temperature range of -55°C to 175°C (TJ). Applications include automotive systems, power supplies, and industrial motor control. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 70A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 270µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 175 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12400 pF @ 15 V |
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