IPD040N03LGBTMA1
MOSFET N-CH 30V 90A TO252-31Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPD040N03LGBTMA1 is a 30V N-Channel power MOSFET designed for efficient power management applications. This device features a low on-resistance of 4mOhm at 30A and 10V Vgs, contributing to reduced conduction losses. With a continuous drain current capability of 90A (Tc) and a maximum power dissipation of 79W (Tc), it is suitable for demanding power conversion tasks. The TO-252-3, DPAK package facilitates surface mounting for optimized thermal performance and board space utilization. Key electrical parameters include a gate charge (Qg) of 38 nC at 10V and input capacitance (Ciss) of 3900 pF at 15V, enabling fast switching speeds. Operating across a wide temperature range from -55°C to 175°C (TJ), this MOSFET is employed in automotive and industrial power supply circuits.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 15 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
