IPD03N03LA G
MOSFET N-CH 25V 90A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD03N03LA-G is an N-Channel MOSFET with a drain-source voltage (Vdss) of 25V. This surface mount component offers a continuous drain current (Id) of 90A at 25°C and a maximum power dissipation of 115W (Tc). Key specifications include a low on-resistance (Rds On) of 3.2mOhm at 60A, 10V, and a gate charge (Qg) of 41 nC at 5V. The input capacitance (Ciss) is a maximum of 5200 pF at 15V. Designed for demanding applications, it operates within a temperature range of -55°C to 175°C (TJ). The component is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 (PG-TO252-3-11) and supplied on tape and reel. This MOSFET is suitable for use in power management applications across various industrial sectors.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 70µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5200 pF @ 15 V |
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