IPD031N03LGBTMA1
MOSFET N-CH 30V 90A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' OptiMOS™ IPD031N03LGBTMA1 is an N-channel Power MOSFET designed for demanding applications. This component features a 30V drain-source voltage and a continuous drain current capability of 90A at 25°C, with a maximum power dissipation of 94W. The low on-resistance of 3.1mOhm at 30A and 10V gate drive makes it suitable for efficient power switching. Key parameters include a gate charge of 51nC and input capacitance of 5300pF, facilitating high-frequency operation. The device is housed in a surface-mount PG-TO252-3-11 package, commonly known as DPAK, and supplied on tape and reel. Typical industries utilizing this technology include automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5300 pF @ 15 V |
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