IPC90N04S53R6ATMA1
MOSFET N-CH 40V 90A 8TDSON-34Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPC90N04S53R6ATMA1, features a 40V drain-source breakdown voltage and continuous drain current capability of 90A at 25°C (Tc). This AEC-Q101 qualified component is housed in an 8-PowerTDFN package (PG-TDSON-8-34) for surface mounting, with a low on-resistance of 3.6mOhm at 45A and 10V gate-source voltage. It offers excellent thermal performance with a maximum power dissipation of 63W (Tc) and an extended operating temperature range of -55°C to 175°C (TJ). Key parameters include a maximum gate charge of 32.6nC at 10V and input capacitance of 1950pF at 25V. This device is designed for demanding automotive applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 3.4V @ 23µA |
| Supplier Device Package | PG-TDSON-8-34 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 32.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1950 pF @ 25 V |
| Qualification | AEC-Q101 |
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