IPC80N04S403ATMA1
MOSFET N-CH 40V 80A TDSON-8-23Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPC80N04S403ATMA1 is a high-performance N-channel Power MOSFET designed for demanding applications. This automotive-grade component features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 80A at 25°C. The low on-resistance (Rds On) of 3.3mOhm at 40A and 10V ensures efficient power transfer. With a maximum power dissipation of 100W (Tc), it is suitable for high-power switching. The device is housed in a PG-TDSON-8-23 package, enabling surface mounting. Key electrical characteristics include a gate charge (Qg) of 71 nC at 10V and input capacitance (Ciss) of 5720 pF at 25V. Operating over a temperature range of -55°C to 175°C (TJ), this MOSFET meets AEC-Q101 qualification and is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 60µA |
| Supplier Device Package | PG-TDSON-8-23 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 71 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5720 pF @ 25 V |
| Qualification | AEC-Q101 |
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