IPC60N04S4L06ATMA1
MOSFET N-CH 40V 60A TDSON-8-23Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ N-Channel MOSFET, part number IPC60N04S4L06ATMA1, is designed for high-efficiency power switching applications. This device features a 40 V drain-source voltage (Vdss) and a continuous drain current (Id) of 60 A at 25°C (Tc). The low on-resistance (Rds On) of 5.6 mOhm at 30 A and 10 V gate-source voltage (Vgs) ensures minimal conduction losses. Key parameters include a gate charge (Qg) of 43 nC at 10 V and input capacitance (Ciss) of 3600 pF at 25 V. The component offers a maximum power dissipation of 63 W (Tc) and operates over a wide temperature range of -55°C to 175°C (TJ). Packaged in an 8-PowerTDFN (PG-TDSON-8-23) and supplied on tape and reel, this AEC-Q101 qualified component is suitable for automotive applications.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 30µA |
| Supplier Device Package | PG-TDSON-8-23 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V |
| Qualification | AEC-Q101 |
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