IPC60N04S406ATMA1
MOSFET N-CH 40V 60A TDSON-8-23Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPC60N04S406ATMA1 is an N-Channel Power MOSFET designed for demanding applications. This AEC-Q101 qualified component features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 60A at 25°C. With a low on-resistance (Rds On) of 6mOhm at 30A and 10V, it ensures efficient power transfer. The device is packaged in a PG-TDSON-8-23 (8-PowerTDFN) surface mount package, suitable for automated assembly. Key electrical characteristics include a gate charge (Qg) of 33 nC at 10V and input capacitance (Ciss) of 2650 pF at 25V. This MOSFET is engineered for automotive and industrial power management systems, offering a maximum power dissipation of 63W (Tc). It operates across a wide temperature range from -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 30µA |
| Supplier Device Package | PG-TDSON-8-23 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2650 pF @ 25 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
