IPC50N04S55R8ATMA1
MOSFET N-CH 40V 50A 8TDSON-33Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPC50N04S55R8ATMA1, features a 40V drain-source breakdown voltage and a continuous drain current capability of 50A at 25°C (Tc). This device exhibits a low on-resistance (Rds(on)) of 5.8mOhm maximum at 25A and 10V Vgs. The N-channel MOSFET is constructed using advanced silicon technology, offering efficient switching performance. Its gate charge (Qg) is specified at 18nC maximum at 10V Vgs, and the input capacitance (Ciss) is 1090pF maximum at 25V Vds. The IPC50N04S55R8ATMA1 is housed in an 8-PowerTDFN (PG-TDSON-8-33) package, designed for surface mounting. This component is suitable for high-power applications across various industries including automotive, industrial power supplies, and power management systems, operating within a temperature range of -55°C to 175°C (TJ). The power dissipation is rated at 42W maximum (Tc).
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 3.4V @ 13µA |
| Supplier Device Package | PG-TDSON-8-33 |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1090 pF @ 25 V |
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