IPC302NE7N3X1SA1
MOSFET N-CH 75V 1A SAWN ON FOILManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel MOSFET, part number IPC302NE7N3X1SA1, offers a 75V drain-source voltage rating and 1A continuous drain current (Tj). This surface mount device features a low Rds(on) of 100mOhm at 2A and 10V Vgs. The N-channel FET utilizes Metal Oxide technology and is supplied in a sawn on foil package, suitable for bulk handling. Typical applications include power management and switching circuits in automotive and industrial sectors. The threshold voltage (Vgs(th)) is specified at 3.8V with a drain current of 270µA.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Tj) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 3.8V @ 270µA |
| Supplier Device Package | Sawn on foil |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 75 V |
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