IPC302N20NFDX1SA1
MOSFET N-CH 200V 1A SAWN ON FOILManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPC302N20NFDX1SA1 is a 200V N-Channel MOSFET designed for demanding applications. This surface mount component features a low Rds(on) of 100mOhm at 2A and 10V Vgs, ensuring efficient power switching. The device is rated for a continuous drain current of 1A (Tj) and has a gate threshold voltage of 4V at 270µA. The IPC302N20NFDX1SA1 is supplied in a Sawn on foil package, ideal for high-volume manufacturing. Its robust specifications make it suitable for use in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Tj) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 270µA |
| Supplier Device Package | Sawn on foil |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 200 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
