IPC302N12N3X1SA1
MOSFET N-CH 120V 1A SAWN ON FOILManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPC302N12N3X1SA1 is an N-Channel MOSFET designed for high-efficiency power switching applications. This component features a drain-to-source voltage (Vdss) of 120 V and a continuous drain current (Id) of 1 A at 25°C. The Rds On is specified at a maximum of 100 mOhm when driven at 2 A and 10 Vgs. The device is surface-mount and supplied in a Sawn on Foil package, indicating a die form factor suitable for advanced semiconductor assembly processes. This MOSFET technology is commonly utilized in automotive, industrial automation, and power supply sectors where robust performance and efficient power management are critical. The typical gate threshold voltage (Vgs(th)) is 4 V at 275 µA.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Tj) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 275µA |
| Supplier Device Package | Sawn on foil |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 120 V |
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