IPC300N20N3X7SA1
MV POWER MOSManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™3 IPC300N20N3X7SA1 is a 200V N-Channel Power MOSFET supplied as a bare die. This component features a low Rds(on) of 100mOhm at 2A and 10V Vgs, indicative of its high efficiency for demanding power applications. The N-channel enhancement mode technology and 10V gate drive requirement are optimized for robust performance. Designed for surface mount integration, its bare die package is suitable for advanced assembly processes in high-density power solutions. This MOSFET is commonly utilized in industrial power switching, automotive electronics, and power management systems where reliable and efficient power conversion is critical.
Additional Information
Series: OptiMOS™3RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 270µA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 200 V |
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