IPC218N06N3X7SA1
MV POWER MOSManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ 3 N-Channel MOSFET, Part Number IPC218N06N3X7SA1, is a 60 V surface mount die. This MV POWER MOS component features an Rds On of 100 mOhm at 2 A and 10 V, with a gate threshold voltage (Vgs(th)) of 4V at 196 µA. Designed for high-efficiency switching applications, it utilizes Metal Oxide MOSFET technology. The IPC218N06N3X7SA1 is suitable for power management solutions in automotive, industrial, and consumer electronics sectors. It is supplied in bulk packaging.
Additional Information
Series: OptiMOS™ 3RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 196µA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 60 V |
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