IPC218N06N3X1SA2
MOSFET N-CH 60V 3A SAWN ON FOILManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPC218N06N3X1SA2 is an N-Channel MOSFET designed for demanding applications. This component features a drain-to-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 3 A at 25°C. The on-resistance (Rds On) is a maximum of 100 mOhm at 2 A and a gate-to-source voltage (Vgs) of 10V, ensuring efficient power transfer. The threshold voltage (Vgs(th)) is 4V at 196µA. This MOSFET is supplied in a sawn-on-foil package for surface mounting, suitable for use in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tj) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 196µA |
| Supplier Device Package | Sawn on foil |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 60 V |
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