IPC218N04N3X7SA1
MV POWER MOSManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ 3 N-Channel Power MOSFET, part number IPC218N04N3X7SA1, is a 40V surface mount die optimized for high-efficiency switching applications. Featuring a maximum Rds(on) of 50mOhm at 2A and 10V Vgs, this device leverages advanced MOSFET technology for minimal conduction losses. The Vgs(th) is specified at 4V with a corresponding Id of 200µA, and a 10V drive voltage ensures operation of the lowest Rds(on) values. This component is suitable for demanding power management solutions in automotive, industrial automation, and consumer electronics sectors where high power density and thermal performance are critical. Packaged as a bare die for advanced assembly processes.
Additional Information
Series: OptiMOS™ 3RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 200µA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 40 V |
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