IPC218N04N3X1SA1
MOSFET N-CH 40V 2A SAWN ON FOILManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel MOSFET, part number IPC218N04N3X1SA1, is a 40V device designed for efficient power switching. This surface-mount component features a continuous drain current capability of 2A at 25°C (Tj) and a maximum Rds(on) of 50mOhm at 2A, 10V. The drive voltage requirement is 10V for optimal performance. The N-Channel MOSFET technology offers low on-resistance for reduced power loss. The device is supplied in a Sawn on Foil package, suitable for automated assembly processes. This component is commonly utilized in automotive and industrial power management applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tj) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 200µA |
| Supplier Device Package | Sawn on foil |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 40 V |
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