IPC100N04S5L2R6ATMA1
MOSFET N-CH 40V 100A 8TDSON-34Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPC100N04S5L2R6ATMA1, is a 40V, 100A device qualified to AEC-Q101 for automotive applications. This surface mount component features a low Rds(on) of 2.6mOhm at 50A and 10V Vgs, with a maximum continuous drain current of 100A at 25°C. The device is housed in a PG-TDSON-8-34 package, offering 75W of power dissipation. Key parameters include a gate charge (Qg) of 55nC at 10V and input capacitance (Ciss) of 2925pF at 25V. Operating temperature range is from -55°C to 175°C. This component is suitable for demanding power management applications in the automotive sector.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 30µA |
| Supplier Device Package | PG-TDSON-8-34 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2925 pF @ 25 V |
| Qualification | AEC-Q101 |
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