IPC100N04S5L1R9ATMA1
MOSFET N-CH 40V 100A 8TDSON-34Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPC100N04S5L1R9ATMA1 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 40V drain-source breakdown voltage and a continuous drain current capability of 100A at 25°C (Tc). The low on-resistance of 1.9mOhm at 50A and 10V gate drive minimizes conduction losses. Designed for surface mounting, it utilizes the PG-TDSON-8-34 package, commonly found in automotive and industrial power management systems. Key parameters include a gate charge of 81nC (max) at 10V, input capacitance of 4310pF (max) at 25V, and a maximum power dissipation of 100W (Tc). The device operates across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 50µA |
| Supplier Device Package | PG-TDSON-8-34 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4310 pF @ 25 V |
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