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IPC100N04S5L1R1ATMA1

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IPC100N04S5L1R1ATMA1

MOSFET N-CH 40V 100A 8TDSON-34

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies OptiMOS™ IPC100N04S5L1R1ATMA1 is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 40 V and a continuous Drain Current (Id) of 100 A at 25°C (Tc), with a maximum power dissipation of 150 W (Tc). The low on-resistance of 1.1 mOhm is achieved at 50 A and 10 V (Vgs). Key parameters include a maximum gate charge (Qg) of 140 nC at 10 V and input capacitance (Ciss) of 8250 pF at 25 V. The device operates with a gate-source threshold voltage (Vgs(th)) of 2 V at 90 µA and supports a maximum gate-source voltage (Vgs) of ±16 V. Utilizing advanced MOSFET technology, it is manufactured with a 4.5V to 10V drive voltage range. The IPC100N04S5L1R1ATMA1 is housed in an 8-PowerTDFN package (PG-TDSON-8-34) and is supplied on a Tape & Reel (TR). This component meets AEC-Q101 qualification, making it suitable for automotive and industrial applications. Its operating temperature range is -55°C to 175°C (TJ).

Additional Information

Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Rds On (Max) @ Id, Vgs1.1mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)150W (Tc)
Vgs(th) (Max) @ Id2V @ 90µA
Supplier Device PackagePG-TDSON-8-34
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8250 pF @ 25 V
QualificationAEC-Q101

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