IPC100N04S52R8ATMA1
MOSFET N-CH 40V 100A 8TDSON-34Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPC100N04S52R8ATMA1 is a 40V N-Channel Power MOSFET designed for high-performance applications. This component features a low Rds(on) of 2.8mOhm at 50A and 10V Vgs, enabling efficient power transfer. With a continuous drain current of 100A (Tc) and a maximum power dissipation of 75W (Tc), it is suitable for demanding power management tasks. The device utilizes a PG-TDSON-8-34 package for surface mounting, offering excellent thermal performance. Key electrical characteristics include a 45nC gate charge and 2600pF input capacitance. Operating across a temperature range of -55°C to 175°C (TJ), this MOSFET is utilized in automotive and industrial power systems. The device supports drive voltages from 7V to 10V, with a ±20V maximum gate-source voltage.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 3.4V @ 30µA |
| Supplier Device Package | PG-TDSON-8-34 |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
