IPC100N04S51R7ATMA1
MOSFET N-CH 40V 100A 8TDSON-34Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ series N-Channel Power MOSFET, part number IPC100N04S51R7ATMA1. This device features a 40V drain-source voltage and a continuous drain current of 100A at 25°C, with a maximum power dissipation of 115W. The low on-resistance, specified at 1.7mOhm maximum at 50A and 10V gate-source voltage, is a key characteristic. It utilizes N-Channel MOSFET technology and is available in the PG-TDSON-8-34 package, suitable for surface mounting. Key parameters include a gate charge of 83 nC at 10V and input capacitance of 4810 pF at 25V. The operating temperature range is from -55°C to 175°C. This component finds application in automotive, industrial power control, and power supply designs.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tc) |
| Vgs(th) (Max) @ Id | 3.4V @ 60µA |
| Supplier Device Package | PG-TDSON-8-34 |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 83 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4810 pF @ 25 V |
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