IPC100N04S51R2ATMA1
MOSFET N-CH 40V 100A 8TDSON-34Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPC100N04S51R2ATMA1 is an N-channel power MOSFET designed for high-performance applications. This component features a 40V drain-source voltage and a continuous drain current capability of 100A at 25°C (Tc). The device exhibits a low on-resistance of 1.2mOhm maximum at 50A and 10V Vgs, coupled with a maximum power dissipation of 150W (Tc). Key parameters include a gate charge of 131 nC (Max) at 10V Vgs and an input capacitance (Ciss) of 7650 pF (Max) at 25V Vds. The IPC100N04S51R2ATMA1 is housed in a PG-TDSON-8-34 package, suitable for surface mount applications. Its operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly utilized in power management systems, automotive electronics, and industrial motor control.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 3.4V @ 90µA |
| Supplier Device Package | PG-TDSON-8-34 |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 131 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7650 pF @ 25 V |
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