IPC100N04S402ATMA1
MOSFET N-CH 40V 100A 8TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPC100N04S402ATMA1, is designed for high-performance applications. This device features a 40 V drain-source voltage and a continuous drain current of 100 A at 25°C (Tc), with a maximum power dissipation of 150 W (Tc). The low on-resistance of 2.4 mOhm at 50 A and 10 V gate drive ensures efficient power transfer. Key parameters include a gate charge of 105 nC at 10 V and input capacitance of 8100 pF at 25 V. The MOSFET utilizes a PG-TDSON-8-23 package for surface mounting and operates across a temperature range of -55°C to 175°C (TJ). This component is qualified to AEC-Q101 and is suitable for automotive applications.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 80µA |
| Supplier Device Package | PG-TDSON-8-23 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8100 pF @ 25 V |
| Qualification | AEC-Q101 |
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