IPB90R340C3ATMA1
MOSFET N-CH 900V 15A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number IPB90R340C3ATMA1, is designed for demanding applications requiring high voltage and efficiency. This TO-263-3 packaged device features a 900V drain-source breakdown voltage and a continuous drain current capability of 15A at 25°C (Tc). With a low on-resistance of 340mOhm at 9.2A and 10V gate drive, it minimizes conduction losses. The MOSFET offers a maximum power dissipation of 208W (Tc) and a gate charge of 94 nC at 10V, facilitating efficient switching. Its surface mount capability and operating temperature range of -55°C to 150°C make it suitable for use in power supply units, industrial motor control, and renewable energy systems.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 340mOhm @ 9.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 100 V |
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