IPB90N06S4L04ATMA1
MOSFET N-CH 60V 90A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPB90N06S4L04ATMA1, offers robust performance for demanding applications. This device features a 60V drain-source voltage (Vdss) and supports a continuous drain current of 90A at 25°C (Tc), with a maximum power dissipation of 150W (Tc). The low on-resistance (Rds On) of 3.4mOhm at 90A and 10V gate-source voltage (Vgs) is achieved with a 10V gate drive, and can also be reliably driven at 4.5V. Key electrical parameters include a maximum gate charge (Qg) of 170 nC at 10V, and input capacitance (Ciss) of 13000 pF at 25V. Packaged in a surface-mount PG-TO263-3-2 (TO-263AB) and supplied on Tape & Reel (TR), this MOSFET operates within a temperature range of -55°C to 175°C (TJ). Its specifications make it suitable for power management, automotive, and industrial power switching applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 90µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13000 pF @ 25 V |
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