IPB90N06S404ATMA2
MOSFET N-CH 60V 90A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB90N06S404ATMA2 is a 60 V N-Channel power MOSFET designed for demanding applications. This component features a low on-resistance of 4 mOhm at 90A and 10V Vgs, enabling efficient current handling. The TO-263-3, D2PAK package facilitates surface mounting and provides robust thermal performance with a maximum power dissipation of 150W. Key electrical parameters include a continuous drain current of 90A (Tc), a gate charge of 128 nC at 10V, and a Ciss of 10400 pF at 25V. Qualified to AEC-Q101 and rated for an operating temperature range of -55°C to 175°C, this MOSFET is suitable for automotive and other high-reliability sectors. It is supplied in Tape & Reel packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 90µA |
| Supplier Device Package | PG-TO263-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 128 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10400 pF @ 25 V |
| Qualification | AEC-Q101 |
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