IPB90N06S404ATMA1
MOSFET N-CH 60V 90A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB90N06S404ATMA1 is an N-channel Power MOSFET designed for robust power management applications. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 90A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 3.7mOhm at 90A and 10V Vgs, optimizing conduction losses. With a maximum power dissipation of 150W (Tc), it is suitable for demanding thermal environments. The TO-263-3, D2PAK surface mount package facilitates efficient board integration. Key electrical characteristics include a gate charge (Qg) of 128 nC at 10V and input capacitance (Ciss) of 10400 pF at 25V. This MOSFET is utilized in industries such as automotive, industrial power supplies, and motor control. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 90µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 128 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10400 pF @ 25 V |
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