IPB80P04P4L08ATMA2
MOSFET P-CH 40V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies OptiMOS®-P2 series contributes the IPB80P04P4L08ATMA2, a P-Channel MOSFET in a PG-TO263-3-2 package. This device features a drain-source voltage of 40 V and a continuous drain current of 80 A at 25°C (Tc). With a low on-resistance of 8.2 mOhm at 80 A and 10 V, it offers efficient power handling up to 75 W (Tc). Key parameters include a gate charge of 92 nC (Max) at 10 V and input capacitance of 5430 pF (Max) at 25 V. Operating across a wide temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for applications in automotive and industrial power management. It is supplied on tape and reel.
Additional Information
Series: OptiMOS®-P2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 120µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +5V, -16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 92 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5430 pF @ 25 V |
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