IPB80P04P4L06ATMA1
MOSFET P-CH 40V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPB80P04P4L06ATMA1 is a P-Channel OptiMOS™ power MOSFET designed for demanding automotive applications. This device features a 40 V drain-source voltage (Vdss) and a continuous drain current (Id) of 80 A at 25°C. With a low on-resistance (Rds On) of 6.4 mOhm at 80 A and 10 V Vgs, it exhibits excellent conduction efficiency. The MOSFET offers a maximum power dissipation of 88 W (Tc) and is qualified to AEC-Q101 standards. Key electrical characteristics include a gate charge (Qg) of 104 nC at 10 V and input capacitance (Ciss) of 6580 pF at 25 V. The device operates across a temperature range of -55°C to 175°C (TJ). It is supplied in a PG-TO263-3-2 package, suitable for surface mounting, and is provided on tape and reel. This component is utilized in automotive power management and electric vehicle systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.4mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 88W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 150µA |
| Supplier Device Package | PG-TO263-3-2 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 104 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6580 pF @ 25 V |
| Qualification | AEC-Q101 |
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