IPB80P04P4L04ATMA2
MOSFET P-CH 40V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS®-P2 series P-channel MOSFET, part number IPB80P04P4L04ATMA2. This surface mount device features a 40V drain-source voltage and a continuous drain current of 80A at 25°C, with a maximum power dissipation of 125W at the same temperature. The Rds On is specified at 4.7mOhm maximum at 80A and 10V gate-source voltage. Key parameters include a gate charge of 176 nC maximum at 10V and an input capacitance of 11570 pF maximum at 25V. The operating temperature range is -55°C to 175°C. The package is a TO-263-3, also known as D2PAK, supplied on tape and reel. This component is suitable for applications in automotive and industrial sectors requiring high-efficiency power switching.
Additional Information
Series: OptiMOS®-P2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +5V, -16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 176 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11570 pF @ 25 V |
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