IPB80P04P4L04ATMA1
MOSFET P-CH 40V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ P-Channel MOSFET, part number IPB80P04P4L04ATMA1, offers a 40V drain-source voltage and 80A continuous drain current at 25°C. This AEC-Q101 qualified component features a low on-resistance of 4.4mOhm at 80A and 10V Vgs, with a maximum power dissipation of 125W. The device is packaged in a PG-TO263-3-2 (TO-263-3, D2PAK) surface mount configuration, supplied on tape and reel. Key electrical characteristics include a maximum gate charge of 176 nC at 10V and input capacitance of 3800 pF at 25V. Suitable for automotive applications, it operates within a temperature range of -55°C to 175°C.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO263-3-2 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 176 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3800 pF @ 25 V |
| Qualification | AEC-Q101 |
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