IPB80P04P407ATMA2
MOSFET_(20V 40V) PG-TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies P-Channel Power MOSFET, part number IPB80P04P407ATMA2, from the OptiMOS™ series. This device features a 40V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 80A at 25°C, with a maximum power dissipation of 88W (Tc). The low on-resistance (Rds On) of 7.4mOhm is achieved at 80A and 10V gate-source voltage (Vgs). With a gate charge (Qg) of 89 nC at 10V and input capacitance (Ciss) of 6085 pF at 25V, this MOSFET is designed for efficient switching applications. It is housed in a PG-TO263-3-2 package for surface mounting and operates across a temperature range of -55°C to 175°C. This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.4mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 88W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6085 pF @ 25 V |
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