IPB80P04P405ATMA1
MOSFET P-CH 40V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ P-Channel MOSFET, part number IPB80P04P405ATMA1, features a Drain-Source Voltage (Vdss) of 40 V. This device offers a continuous drain current (Id) of 80A at 25°C and a maximum power dissipation of 125W (Tc). The low on-state resistance (Rds On) is 4.9mOhm at 80A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 151 nC at 10V Vgs and an Input Capacitance (Ciss) of 10300 pF at 25V Vds. This MOSFET is qualified for AEC-Q101 and is suitable for automotive applications. It is supplied in a PG-TO263-3-2 surface mount package and is available on tape and reel. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO263-3-2 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 151 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10300 pF @ 25 V |
| Qualification | AEC-Q101 |
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