IPB80P03P4L07ATMA2
MOSFET_(20V 40V) PG-TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ P-channel Power MOSFET, part number IPB80P03P4L07ATMA2, is a high-performance device designed for demanding applications. This TO-263-3 packaged MOSFET features a 30V drain-to-source voltage rating and supports a continuous drain current of 80A at 25°C (Tc). With a maximum power dissipation of 88W (Tc) and a low on-resistance of 6.9mOhm at 80A and 10V Vgs, it optimizes efficiency in power conversion. The device operates with gate drive voltages between 4.5V and 10V, and its gate charge is rated at 80nC maximum at 10V Vgs. Input capacitance (Ciss) is 5700pF maximum at 25V Vds. This MOSFET is suitable for use in automotive and industrial power management systems. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.9mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 88W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 130µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +5V, -16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5700 pF @ 25 V |
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