IPB80P03P4L07ATMA1
MOSFET P-CH 30V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ P-Channel MOSFET, part number IPB80P03P4L07ATMA1, offers a 30V drain-source voltage and a continuous drain current of 80A at 25°C. This surface mount device, housed in a TO-263-3 (TO-263AB) package, features a low on-resistance of 6.9mOhm at 80A and 10V Vgs. The maximum power dissipation is 88W at 25°C case temperature. Key parameters include a gate charge of 80 nC at 10V and input capacitance of 5700 pF at 25V. Suitable for applications requiring high current switching and low conduction losses, it operates across a wide temperature range of -55°C to 175°C. This component is commonly utilized in power management, automotive, and industrial applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.9mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 88W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 130µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +5V, -16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5700 pF @ 25 V |
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