IPB80P03P4L04ATMA1
MOSFET P-CH 30V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB80P03P4L04ATMA1 is a P-channel Power MOSFET designed for demanding applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current capability of 80A at 25°C (Tc). The device offers a low on-resistance of 4.1mOhm maximum at 80A and 10V (Vgs), contributing to efficient power delivery. With a maximum power dissipation of 137W (Tc), it is suitable for thermal management in high-power designs. The PG-TO263-3-2 package facilitates surface mounting, and the device operates across a wide temperature range from -55°C to 175°C (TJ). Key parameters include a gate charge (Qg) of 160 nC (Max) at 10V (Vgs) and input capacitance (Ciss) of 11300 pF (Max) at 25V (Vds). This MOSFET is utilized in various power management, automotive, and industrial sectors.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 98 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.1mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 137W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 253µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +5V, -16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11300 pF @ 25 V |
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