IPB80P03P405ATMA2
MOSFET_(20V 40V) PG-TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ P-Channel Power MOSFET, part number IPB80P03P405ATMA2, offers a 30 V drain-source voltage. This surface mount device, packaged in a PG-TO263-3-2 (TO-263AB), features an 80 A continuous drain current at 25°C (Tc) and a maximum power dissipation of 137 W (Tc). The low on-resistance of 4.7 mOhm is achieved at 80 A and 10 V gate-source voltage. Key parameters include a gate charge of 130 nC at 10 V and input capacitance of 10300 pF at 25 V. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for applications requiring efficient power switching and is commonly found in automotive systems and industrial power management.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 137W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 253µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10300 pF @ 25 V |
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