IPB80N08S406ATMA1
MOSFET N-CH 80V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPB80N08S406ATMA1 is an N-Channel Power MOSFET designed for demanding automotive applications. This surface-mount device features a 80 V drain-source voltage and a continuous drain current of 80 A at 25°C (Tc). With a low on-resistance of 5.5 mOhm at 80 A and 10 V, it offers efficient power handling with a maximum power dissipation of 150 W (Tc). The device is packaged in a PG-TO263-3-2 (TO-263-3, D2PAK) and supplied on a Tape & Reel (TR). Key electrical characteristics include a gate charge (Qg) of 70 nC at 10 V and an input capacitance (Ciss) of 4800 pF at 25 V. Qualified to AEC-Q101, this MOSFET is suitable for power management and switching applications within the automotive sector.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 90µA |
| Supplier Device Package | PG-TO263-3-2 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 25 V |
| Qualification | AEC-Q101 |
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