IPB80N08S2L07ATMA1
MOSFET N-CH 75V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPB80N08S2L07ATMA1, is a high-performance device designed for demanding applications. This N-Channel MOSFET features a drain-source voltage (Vdss) of 75 V and a continuous drain current (Id) of 80 A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 6.8 mOhm maximum at 80 A and 10 V Vgs. With a maximum power dissipation of 300 W (Tc), it is suitable for high-power switching in automotive and industrial power supply applications. The PG-TO263-3-2 package facilitates surface mounting, and the device operates across a wide temperature range of -55°C to 175°C (TJ). Key electrical parameters include a gate charge (Qg) of 233 nC maximum at 10 V Vgs and input capacitance (Ciss) of 5400 pF maximum at 25 V Vds. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.8mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 233 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5400 pF @ 25 V |
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