IPB80N06S4L07ATMA1
MOSFET N-CH 60V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ series N-Channel Power MOSFET, part number IPB80N06S4L07ATMA1, offers a 60V drain-source voltage and a continuous drain current of 80A at 25°C (Tc). This surface mount device features a low on-resistance of 6.4mOhm at 80A and 10V Vgs, with a maximum power dissipation of 79W (Tc). The MOSFET utilizes Metal Oxide technology and is packaged in a PG-TO263-3-2 (TO-263-3, D2PAK) configuration, supplied on tape and reel. Key electrical parameters include a maximum gate charge of 75 nC @ 10V and input capacitance of 5680 pF @ 25V. It operates across a wide temperature range of -55°C to 175°C (TJ). This component is commonly employed in power switching applications within the automotive and industrial sectors.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.4mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 40µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5680 pF @ 25 V |
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