IPB80N06S407ATMA1
MOSFET N-CH 60V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPB80N06S407ATMA1, offers a 60V drain-source voltage and continuous drain current capability of 80A at 25°C. This component features a low on-resistance of 7.1mOhm at 80A and 10V gate drive. With a maximum power dissipation of 79W at 25°C and a junction temperature range of -55°C to 175°C, it is suitable for demanding applications. The device is packaged in a PG-TO263-3-2 surface-mount package, commonly known as TO-263AB, supplied in tape and reel. Key electrical characteristics include a gate charge of 56 nC at 10V and input capacitance of 4500 pF at 25V. This MOSFET is utilized in industries such as automotive, industrial power control, and renewable energy systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.1mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 40µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
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