IPB80N06S405ATMA1
MOSFET N-CH 60V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB80N06S405ATMA1 is a 60V N-channel power MOSFET designed for high-efficiency power conversion applications. This component features an ultra-low on-resistance of 5.4mOhm at 80A and 10V Vgs, minimizing conduction losses. The IPB80N06S405ATMA1 is packaged in a PG-TO263-3-2 (TO-263AB) surface-mount package, offering excellent thermal performance with a maximum power dissipation of 107W at 25°C case temperature. Key electrical parameters include a continuous drain current of 80A (Tc), a gate charge of 81nC (Max) at 10V Vgs, and input capacitance (Ciss) of 6500pF (Max) at 25V Vds. Operating across a temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for demanding applications within the automotive and industrial sectors.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.4mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 107W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 60µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6500 pF @ 25 V |
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