IPB80N06S3L-05
MOSFET N-CH 55V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB80N06S3L-05. This N-Channel Power MOSFET features a drain-source voltage (Vdss) of 55 V and a continuous drain current (Id) of 80 A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 4.5 mOhm at 69 A and 10 V. With a maximum power dissipation of 165 W (Tc), it is designed for surface mounting within a PG-TO263-3-2 package. Key parameters include a gate charge (Qg) of 273 nC at 10 V and input capacitance (Ciss) of 13060 pF at 25 V. Operating temperature range is -55°C to 175°C (TJ). This component is suitable for applications in power supplies, automotive, and industrial motor control.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 69A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 165W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 115µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 273 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13060 pF @ 25 V |
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